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18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629 Features
Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
General Description
Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs MMIC doubler integrates a doubler and 4-stage power amplifier. The device provides better than +26.0 dBm output power and has excellent fundamental rejection. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Pointto-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+6.0 VDC 800 mA +0.3 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter Input Frequency Range (fin) Output Frequency Range (fout) Input Return Loss (S11) Output Return Loss (S22) Fundamental Rejection RF Input Power (RF Pin) Output Power at 0.0 dBm Pin (Pout) Drain Supply Voltage (Vd1) Doubler Drain Supply Voltage (Vd2) Buffer Amp Drain Supply Voltage (Vd3,4,5,6) PA Gate Supply Voltage (Vg1) Doubler Drain Supply Current (Id1) Doubler Drain Supply Current (Id2) Buffer Drain Supply Current (Id3,4,5,6) (Vg=-0.7V Typical) PA Units GHz GHz dB dB dBc dBm dBm V V V V mA mA mA Min. 18.0 36.0 Typ. TBD 12.0 50.0 0.0 +26.0 2.5 3.0 4.5 -1.2 <1.0 20 530 Max. 21.0 42.0 3.0 4.0 5.5 25 600
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Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
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18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629 Power Amplifier Measurements
WP 398 - 042A A102: 20D B L0629 (8 samples) VdX2=2.5 V , Vd B=3 V, Vd PA =4.5 V, P in= +2..+9 d B m
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 37 37.5 38 38.5 39 39.5 40
P out @ f
in
20DBL0629 at Vdx2 =2.5 V, Vdbuff =3 V I db=30 mA, V dPA =4.5 V I dPA =520 mA
35 30 25
P out @ 2 f
in
Output power at fin and 2xf in (dBm)
20 15 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 -55 10
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0 1 2 3 4 5 6 7 8 9 10
Output pow er ( dBm )
Output frequency ( GHz)
20DBL0629 (R10 C11 ): V dX2=2.5V, V dB=3 V, VdPA=4.5 V @ P in=0..+10 dBm
35 P in=+10 dB m
35
Input power (dBm) at f in
20DBL0629 (R10C11): VdX2=2.5V, V dB=3 V , V dPA=4.5 V @ P in=0..+10 dBm 37-40 GHz
Doubler drain current (mA)
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P in=0 dBm 37.5 38.0 38.5 39.0 39.5 40.0
30
25
Doubler drain current (mA)
30
25
20
20
15
15
10 37.0
0
4
6
8
10
Output frequency (G Hz)
Input power @ fin (G Hz)
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20DB L0629 at V dx2 =2.5 V, Vdbuff=3 V I db=30 m A, VdPA=4.5 V I dPA =520 m A
28 27 26 25
20DB L0629 at Vdx2 =2.5 V , V dbuff =3 V I db=30 mA , V dPA =4.5 V I dPA=520 mA
0 -5 -10
Output powe r a t 2x fin (d B m)
Output powe r a t f in (d B m)
24
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23 22 21 20 19 18 17 16 15 14 13 12 11 10
-15 -20 -25 -30 -35 -40 -45 -50 -55
062 9, RC =R 10C 12, R F freq (G Hz)=37 062 9, RC =R 10C 12, R F freq (G Hz)=38 062 9, RC =R 10C 12, R F freq (G Hz)=39 062 9, RC =R 10C 12, R F freq (G Hz)=40
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
7
8
9 10
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
7
8
9 10
Input power ( dBm) a t f in
Input power (dB m) at f in
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629 Mechanical Drawing
0.295 (0.012) 1.700 (0.067) 0.694 (0.027) 1.095 (0.043) 1.494 (0.059) 2.096 (0.083) 2.705 (0.107) 2
3
4
5
6
7
0.605 (0.024)
1
14 0.0 0.0
13
12
11
10
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9
(Note: Engineering designator is 20DBL0629)
Bond Pad #1 (RF In) Bond Pad #2 (Vg2) Bond Pad #3 (Vd2) Bond Pad #4 (Vd3)
Bond Pad #5 (Vd4) Bond Pad #6 (Vd5) Bond Pad #7 (Vd6) Bond Pad #8 (RF Out)
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Vd3,4,5
6 7 9
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.987 mg. Bond Pad #9 (Vg6) Bond Pad #10 (Vg5) Bond Pad #11 Vg4) Bond Pad #12 (Vg3) Bond Pad #13 (Vd1) Bond Pad #14 (Vg1)
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Vd6 RF Out Vg6
0.295 (0.012)
0.695 (0.027)
1.095 (0.043)
1.495 (0.059)
2.096 (0.083)
2.503 (0.099)
Bias Arrangement
Vd2 Vg2
2 3 4
Bypass Capacitors - See App Note [2]
5
1
RF In
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8
14
13
12
11
10
Vg1 Vd1 Vg3,4,5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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8 0.638 (0.025) 3.000 (0.118)
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18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd6 at Vd1=2.5V, Vd2=3.0V, Vd(3,4,5,6)=4.5V with
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. Vd(3,4,5,6) or Vg(3,4,5,6) have been tied together but can be left open. For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3,4,5,6 and Vg1,2,3,4,5,6) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
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Rth TBD TBD TBD
Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius
Channel Temperature TBD TBD TBD
MTTF Hours
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FITs
TBD TBD TBD
TBD TBD TBD
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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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Id1<1mA, Id2=20mA, Id3=40mA, Id4=70mA, Id5=150mA, Id6=270mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the effective gate control voltage. As shown in the bonding diagram, it is possible to parallel stages Vd(3,4,5) with Id(3,4,5)=260mA while maintaining satisfactory performance. For non-critical applications it is possible to parallel stages Vd(3,4,5,6) together and adjust the common gate voltage Vg(3,4,5,6) for total drain current Id(total)=530mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
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18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629 Device Schematic
VG2 VD2 V D3 V D4 V D5 V D6
VD
VD
VD
VD
VD
RFin
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VD
X2
AMP
AMP
AMP
AMP
AMP
RFout
VG
VG
VG
VG
VG
VG
VG1
V D1
VG3
V G4
VG5
V G6
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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629 Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C + 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
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ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
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Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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